K.L. Hudson

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At the dawn of modern solid-state computing, transistors were created on germanium. Now germanium is re-emerging as a new frontier for both quantum computing and condensed matter physics, uniquely combining the CMOS compatibility required for scalable semiconductor manufacture with a suite of electronic properties until now only available in III–V semiconductor platforms such as GaAs. This combination positions germanium as a bridge between fundamental condensed matter physics and large-scale technological implementation. In less than a decade, developments in germanium heterostructures – crystal growth, defect engineering, and quantum device fabrication – have already been applied to high fidelity spin qubits, electrically driven universal gate operations, and hybrid semiconductor-superconductor architectures.
In this talk I will give an overview highlighting recent breakthroughs in germanium crystal growth and device fabrication that are opening new avenues for exploring mesoscopic and condensed matter phenomena, from quantum Hall edge states and spin–orbit physics to exotic spin states in semiconductor-superconductor hybrid devices. These early results demonstrate that germanium can access the rich condensed matter physics established in III–V systems and likely beyond. The result is a much shorter path from discovering new physics in germanium to harnessing it in scalable quantum devices, creating renewed opportunities for fundamental condensed matter physics to directly shape future quantum technologies.

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TU Delft
PH2
Contact: Erwann Bocquillon / Matteo Cacco