SFB 1238 | June 18, 14:30

Valley phenomena in gate-defined devices

Antonio Manesco

Coherent control and detection of the valley degree of freedom is a cornerstone for valleytronics and valley-based quantum computation. However, access to valley-coherent phenomena requires samples without short-range scattering. Recent fabrication advances on gate-defined bilayer graphene devices minimize the effects of intervalley scattering. Consequently, a series of recent experiments reported control over valley-polarized states. As an example of this progress, I will introduce our recent efforts to generate valley-polarized electric currents in bilayer graphene. I will first show the suppression of intervalley scattering in gate-defined quantum point contacts via electron focusing experiments. Then, I will present a magnetically controlled source of valley-polarized currents using Fermi surface warping. In the second part of my talk, I focus on theoretical proposals for the next generation of experiments. Namely, I will present how to use gate-defined valley-helical states to probe and engineer correlated phases of matter.


Delft University of Technology
PH2
Contact: Achim Rosch / Matteo Cacco