SFB 1238 | August 02, 15:30
Engineering point and extended defects in 2D transition metal dichalcogenides
Abstract: Two-dimensional (2D) materials such as graphene, hexagonal boron nitride, and transition metal dichalcogenides have recently received lots of attention due to their unique material properties and numerous potential applications. The 2D atomic structure can also facilitate distinct defect formation mechanisms and offer new possibilities for defect engineering. In my talk, I will present the results from layered molybdenum dichalcogenides (MoS2, WSe2, etc.), where vacancy, substitutional, interstitial, and grain boundary defects are introduced by electron irradiation or by various chemical treatments. Due to the 2D nature, the defect formation and properties can be characterized using transmission electron microscopy and scanning tunneling microscopy. First-principles calculations are used to provide microscopic insight into the energetics and kinetics of these processes. The gained understanding together with the computationally predicted defect properties can be used to guide future efforts in tailoring the 2D material properties via defect engineering.
Seminar Room of the Institute of Physics II
Contact: Prof. Thomas Michely