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Silicon-based complementary metal-oxide-semiconductor (CMOS) devices are the basic building blocks of integrated electronic logic and memory devices. Their continuous downscaling which, as described by Moore’s law, leads to a doubling of the number of transistors on a chip every two years, cannot go on indefinitely: Today’s smallest transistors function despite quantum mechanics; their metal-wire interconnects will also face scaling limits. New design paradigms that make use of quantum mechanics instead of trying to avoid its effects will be necessary. In this talk, I will present some current work on spin injection into SiGe-heterostructures, tunneling field effect transistors (FETs), and electrical detection of plasmons.

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Inga Fischer, Universität Stuttgart
Seminarraum Theoretische Physik
Contact: not specified